Solutions for Silicon-based Photovoltaics Materials.
Crystalline Silicon (c-Si), amorphous Silicon (a-Si), poly-Silicon (p-Si), micro-crystalline Silicon (mc-Si) etc. have proven to be efficiency Photovoltaic materials. HORIBA offers a range of instruments covering a range of techniques used in multiple measurement requirements related to these materials.
Solutions for...
Techniques useful for analysis of Silicon-based Photovoltaic materials
- Raman Spectroscopy (RS) for offline or inline crystallinity monitoring, stress measurement, defect molecular composition analysis...
- Photoluminescence (PL) and micro-PL for bandgap measurement, impurities and dopant analysis, cracks and defects measurement as well as electro-luminescence.
- Spectroscopic Ellipsometry (SE) for measurement of optical constants, thickness, roughness, bandgap etc...
- Inductively Coupled Plasma (ICP Optical Emission Spectroscopy for elemental composition analysis of very low concentration impurities.
- X-Ray Fluorescence (XRF) for elemental composition analysis of some dopants.
- Time Correlated Single Photon Counting (TCSPC) for lifetime measurement.
- Fourier Transform Infra-Red (FT-IR) for measurement of some impurities and dopants.
- Gas and Liquid Mass Flow control (MFCs) for process liquid and gas monitoring.
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