Stress in Silicon has been measured and imaged easily with Raman spectroscopy for many decades. The use of different laser wavelengths allow to probe at different depths.

• Raman Spectroscopy

  

  for measurement of stress generated in Silicon based photovoltaics.
  
  Raman microscopes are able to image stress at the sub-micron level, on depths ranging from a few nanometers using UV Raman to several microns with NIR excitation.