Cracks, defects and impurities can degrade performances quickly, and it is often important to locate, identify and characterize these artifacts early in order to imporve yield.

Raman spectroscopy is a very useful technique to analyze chemical composition of defects. Photoluminescence (PL) allows for detecting and locating cracks in Silicon based photovoltaics, while low temperature PL is a common technique to look at impurities in siliconand III-V materials. FT-IR can also be used to measure impurities at low levels.

• Raman Spectroscopy

  

  for measurement of chemical composition of defects, particles, organic or inorganic, on most substrates.
  
  
  
  

• Inductively Coupled Plasma Optical Emission Spectroscopy (ICP-OES)

  

  for analysis of ppm impurity levels in ultra pure Silicon
  
  
  
  

  Photoluminescence and micro-PL mapping

  

  for locating cracks in Silicon Photovoltaics and for analyzing impurities content (low temperature PL) like P, .
  
  
  
  

• FT-IR (Fourier Transform Infra-Red

  for analyzing impurities content (low temperature) like Carbon, Oxygen...